SSM3J15FV,L3F Toshiba Semiconductor and Storage MOSFET P-CH 30V 0.1A VESM P-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount VESM
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| Producent | Toshiba Semiconductor and Storage | | Part Number | SSM3J15FV,L3F (SSM3J15FVL3F) |
| Specifications | MOSFET P-CH 30V 0.1A VESM P-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount VESM |
| Unit Price | 0,23 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 112 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series π-MOSVI Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Vgs(th) (Max) @ Id 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 9.1pF @ 3V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 150mW (Ta) Rds On (Max) @ Id, Vgs 12 Ohm @ 10mA, 4V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package VESM Package / Case SOT-723 |
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