RN2961FE(TE85L,F) Toshiba Semiconductor and Storage TRANS 2PNP PREBIAS 0.1W ES6 Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
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| Producent | Toshiba Semiconductor and Storage | | Part Number | RN2961FE(TE85L,F) (RN2961FETE85LF) |
| Specifications | TRANS 2PNP PREBIAS 0.1W ES6 Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6 |
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| Minimum Order Quantity | 1 |
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| Description | Categories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Arrays, Pre-Biased Manufacturer Toshiba Semiconductor and Storage Series - Packaging Digi-Reel® Part Status Obsolete Transistor Type 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) (Ohms) 4.7k Resistor - Emitter Base (R2) (Ohms) 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 100mW Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package ES6 |
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