RN2702TE85LF Toshiba Semiconductor and Storage TRANS 2PNP PREBIAS 0.2W USV Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 200mW Surface Mount USV

ProducentToshiba Semiconductor and Storage
Part Number

RN2702TE85LF (RN2702TE85LF)

Specifications

TRANS 2PNP PREBIAS 0.2W USV Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 200mW Surface Mount USV

Unit Price0,39 EUR
Minimum Order Quantity1
Tariff No.
Lead Time112 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Arrays, Pre-Biased Manufacturer Toshiba Semiconductor and Storage Series - Packaging Digi-Reel® Part Status Active Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) (Ohms) 10k Resistor - Emitter Base (R2) (Ohms) 10k DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package USV
Datasheets
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