2SC6076(TE16L1,NV) Toshiba Semiconductor and Storage TRANS NPN 80V 3A PW MOLD Bipolar (BJT) Transistor NPN 80V 3A 150MHz 10W Surface Mount PW-MOLD

ProducentToshiba Semiconductor and Storage
Part Number

2SC6076(TE16L1,NV) (2SC6076TE16L1NV)

Specifications

TRANS NPN 80V 3A PW MOLD Bipolar (BJT) Transistor NPN 80V 3A 150MHz 10W Surface Mount PW-MOLD

Unit Price0,57 EUR
Minimum Order Quantity1
Tariff No.
Lead Time112 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Manufacturer Toshiba Semiconductor and Storage Series - Packaging Cut Tape (CT) Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA, 2V Power - Max 10W Frequency - Transition 150MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package PW-MOLD
Datasheets
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