RN4987FE,LF(CB Toshiba Semiconductor and Storage TRANS NPN/PNP PREBIAS 0.1W ES6 Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
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| Producent | Toshiba Semiconductor and Storage | | Part Number | RN4987FE,LF(CB (RN4987FELFCB) |
| Specifications | TRANS NPN/PNP PREBIAS 0.1W ES6 Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6 |
| Unit Price | 0,23 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Arrays, Pre-Biased Manufacturer Toshiba Semiconductor and Storage Series - Packaging Cut Tape (CT) Part Status Active Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) (Ohms) 10k Resistor - Emitter Base (R2) (Ohms) 47k DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz, 200MHz Power - Max 100mW Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package ES6 |
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