RN4606(TE85L,F) Toshiba Semiconductor and Storage TRANS NPN/PNP PREBIAS 0.3W SM6 Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz, 250MHz 300mW Surface Mount SM6
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| Producent | Toshiba Semiconductor and Storage | | Part Number | RN4606(TE85L,F) (RN4606TE85LF) |
| Specifications | TRANS NPN/PNP PREBIAS 0.3W SM6 Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz, 250MHz 300mW Surface Mount SM6 |
| Unit Price | 0,38 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 77 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Arrays, Pre-Biased Manufacturer Toshiba Semiconductor and Storage Series - Packaging Digi-Reel® Part Status Active Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) (Ohms) 4.7k Resistor - Emitter Base (R2) (Ohms) 47k DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100µA (ICBO) Frequency - Transition 200MHz, 250MHz Power - Max 300mW Mounting Type Surface Mount Package / Case SC-74, SOT-457 Supplier Device Package SM6 |
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