2SA1312-BL(TE85L,F Toshiba Semiconductor and Storage TRANS PNP 120V 0.1A S-MINI Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini

ProducentToshiba Semiconductor and Storage
Part Number

2SA1312-BL(TE85L,F (2SA1312BLTE85LF)

Specifications

TRANS PNP 120V 0.1A S-MINI Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini

Unit Price0,32 EUR
Minimum Order Quantity1
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Manufacturer Toshiba Semiconductor and Storage Series - Packaging Cut Tape (CT) Part Status Active Transistor Type PNP Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 2mA, 6V Power - Max 150mW Frequency - Transition 100MHz Operating Temperature 125°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package S-Mini
Datasheets
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