RN1106,LF(CT Toshiba Semiconductor and Storage TRANS PREBIAS NPN 50V 0.1W SSM Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM
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| Producent | Toshiba Semiconductor and Storage | | Part Number | RN1106,LF(CT (RN1106LFCT) |
| Specifications | TRANS PREBIAS NPN 50V 0.1W SSM Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM |
| Unit Price | 0,23 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single, Pre-Biased Manufacturer Toshiba Semiconductor and Storage Series - Packaging Cut Tape (CT) Part Status Active Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) (Ohms) 4.7k Resistor - Emitter Base (R2) (Ohms) 47k DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz Power - Max 100mW Mounting Type Surface Mount Package / Case SC-75, SOT-416 Supplier Device Package SSM |
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