SI1330EDL-T1-GE3 Vishay Vishay SI1330EDL-T1-GE3 N-channel MOSFET Transistor, 0.24 A, 60 V, 3-pin SOT-323
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| Producent | Vishay | | Part Number | SI1330EDL-T1-GE3 (SI1330EDLT1GE3) |
| Specifications | Vishay SI1330EDL-T1-GE3 N-channel MOSFET Transistor, 0.24 A, 60 V, 3-pin SOT-323 |
| Unit Price | 0,33 EUR |
| Minimum Order Quantity | 1 |
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| Description | CategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions2.2 x 1.35 x 1mm Height1mm Length2.2mm Maximum Continuous Drain Current0.24 A Maximum Drain Source Resistance8 Ω Maximum Drain Source Voltage60 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature150 °C Maximum Power Dissipation0.28 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeSOT-323 Pin Count3 Typical Gate Charge @ Vgs0.4 nC@ 4.5 V Typical Turn-Off Delay Time12.8 ns Typical Turn-On Delay Time3.8 ns Width1.35mm Product Details N-Channel MOSFET, up to 2A, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor |
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