SI3410DV-T1-GE3 Vishay Vishay SI3410DV-T1-GE3 N-channel MOSFET Transistor, 8 A, 30 V, 6-pin TSOP
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| Producent | Vishay | | Part Number | SI3410DV-T1-GE3 (SI3410DVT1GE3) |
| Specifications | Vishay SI3410DV-T1-GE3 N-channel MOSFET Transistor, 8 A, 30 V, 6-pin TSOP |
| Unit Price | 0,58 EUR |
| Minimum Order Quantity | 1 |
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| Description | CategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationQuad Drain Dimensions3.1 x 1.7 x 1mm Height1mm Length3.1mm Maximum Continuous Drain Current8 A Maximum Drain Source Resistance0.023 Ω Maximum Drain Source Voltage30 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+150 °C Maximum Power Dissipation4.1 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeTSOP Pin Count6 Typical Gate Charge @ Vgs21.8 nC@ 10 V Typical Input Capacitance @ Vds1295 pF@ 15 V Typical Turn-Off Delay Time21 ns Typical Turn-On Delay Time21 ns Width1.7mm Product Details N-Channel MOSFET, 8A to 9A, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor |
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