SIHF620S-GE3 Vishay Vishay SIHF620S-GE3 N-channel MOSFET Transistor, 5.2 A, 200 V, 3-pin D2PAK
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| Producent | Vishay | | Part Number | SIHF620S-GE3 (SIHF620SGE3) |
| Specifications | Vishay SIHF620S-GE3 N-channel MOSFET Transistor, 5.2 A, 200 V, 3-pin D2PAK |
| Unit Price | 0,75 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | CategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10.67 x 9.65 x 4.83mm Height4.83mm Length10.67mm Maximum Continuous Drain Current5.2 A Maximum Drain Source Resistance0.8 Ω Maximum Drain Source Voltage200 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature150 °C Maximum Power Dissipation50 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeD2PAK Pin Count3 Typical Gate Charge @ Vgs14 (Max.) nC@ 10 V Typical Input Capacitance @ Vds260 pF@ 25 V Typical Turn-Off Delay Time19 ns Typical Turn-On Delay Time7.2 ns Width9.65mm Product Details N-Channel MOSFET, 4A to 5A, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor |
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