SIHFBC30STRL-GE3 Vishay Vishay SIHFBC30STRL-GE3 N-channel MOSFET Transistor, 3-pin D2PAK

ProducentVishay
Part Number

SIHFBC30STRL-GE3 (SIHFBC30STRLGE3)

Specifications

Vishay SIHFBC30STRL-GE3 N-channel MOSFET Transistor, 3-pin D2PAK

Unit Price1,06 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionCategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10.67 x 9.65 x 4.83mm Height4.83mm Length10.67mm Maximum Continuous Drain Current3.6 A Maximum Drain Source Resistance2.2 Ω Maximum Drain Source Voltage600 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature150 °C Maximum Power Dissipation74 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeD2PAK Pin Count3 Typical Gate Charge @ Vgs31 (Max.) nC@ 10 V Typical Input Capacitance @ Vds660 pF@ 25 V Typical Turn-Off Delay Time35 ns Typical Turn-On Delay Time11 ns Width9.65mm Product Details N-Channel MOSFET, 2A to 4A, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor
Datasheets
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