SIRA10DP-T1-GE3 Vishay Vishay SIRA10DP-T1-GE3 N-channel MOSFET Transistor, 30 A, 30 V, 8-pin PowerPAK-SO-8
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| Producent | Vishay | | Part Number | SIRA10DP-T1-GE3 (SIRA10DPT1GE3) |
| Specifications | Vishay SIRA10DP-T1-GE3 N-channel MOSFET Transistor, 30 A, 30 V, 8-pin PowerPAK-SO-8 |
| Unit Price | 0,75 EUR |
| Minimum Order Quantity | 1 |
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| Description | CategoryTrench MOSFET Channel ModeEnhancement Channel TypeN ConfigurationQuad Drain, Triple Source Dimensions6.25 x 5.26 x 1.12mm Height1.12mm Length6.25mm Maximum Continuous Drain Current30 A Maximum Drain Source Resistance0.0050 Ω Maximum Drain Source Voltage30 V Maximum Gate Source Voltage+20 V, -16 V Maximum Operating Temperature+150 °C Maximum Power Dissipation40 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypePowerPAK-SO-8 Pin Count8 Typical Gate Charge @ Vgs34 nC @ 10 V Typical Input Capacitance @ Vds2425 pF @ 15 V Typical Turn-Off Delay Time27 ns Typical Turn-On Delay Time20 ns Width5.26mm Product Details N-Channel MOSFET, TrenchFET® Gen IV, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor |
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