V10P45S-M3/86A Vishay Vishay V10P45S-M3/86A Schottky Diode, 10A, 45V, 3-pin TO-277A
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| Producent | Vishay | | Part Number | V10P45S-M3/86A (V10P45SM386A) |
| Specifications | Vishay V10P45S-M3/86A Schottky Diode, 10A, 45V, 3-pin TO-277A |
| Unit Price | 0,76 EUR |
| Minimum Order Quantity | 1 |
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| Description | Dimensions4.35 x 6.15 x 0.8mm Diode ConfigurationSingle Diode TypeSchottky Height0.8mm Length4.35mm Maximum Continuous Forward Current10A Maximum Operating Temperature+150 °C Minimum Operating Temperature-40 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeTO-277A Peak Forward Voltage0.41V Peak Non-Repetitive Forward Surge Current180A Peak Reverse Current35mA Peak Reverse Repetitive Voltage45V Pin Count3 Rectifier TypeSchottky Diode Width6.15mm Product Details TMBS® Trench MOS Barrier Schottky Rectifiers, Vishay Semiconductor The Trench MOS Barrier Schottky (TMBS®) Rectifier Series by Vishay contain a patented trench structure. TMBS® rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS® structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds. FeaturesPatented Trench StructureImproved efficiency in AC/DC Switched mode-power supplies and DC/DC convertersHigh power density and low forward voltage Diodes and Rectifiers, Vishay Semiconductor |
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