V30200C-E3/4W Vishay Vishay V30200C-E3/4W Schottky Diode, 30A, 200V, 3-pin TO-220AB
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Producent | Vishay | Part Number | V30200C-E3/4W (V30200CE34W) |
Specifications | Vishay V30200C-E3/4W Schottky Diode, 30A, 200V, 3-pin TO-220AB |
Unit Price | 2,86 EUR |
Minimum Order Quantity | 1 |
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Description | Dimensions10.54 x 4.7 x 15.32mm Diode ConfigurationCommon Cathode Diode TypeRectifier Height15.32mm Length10.54mm Maximum Continuous Forward Current30A Maximum Operating Temperature+150 °C Minimum Operating Temperature-40 °C Mounting TypeThrough Hole Number of Elements per Chip2 Package TypeTO-220AB Peak Forward Voltage1.1V Peak Reverse Current12mA Peak Reverse Repetitive Voltage200V Pin Count3 Rectifier TypeSchottky Barrier Width4.7mm Product Details TMBS® Trench MOS Barrier Schottky Rectifiers, Vishay Semiconductor The Trench MOS Barrier Schottky (TMBS®) Rectifier Series by Vishay contain a patented trench structure. TMBS® rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS® structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds. FeaturesPatented Trench StructureImproved efficiency in AC/DC Switched mode-power supplies and DC/DC convertersHigh power density and low forward voltage Diodes and Rectifiers, Vishay Semiconductor |
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