VB30100S-E3/4W Vishay Vishay VB30100S-E3/4W Schottky Diode, 30A, 100V, 2+Tab-pin TO-263AB
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| Producent | Vishay | | Part Number | VB30100S-E3/4W (VB30100SE34W) |
| Specifications | Vishay VB30100S-E3/4W Schottky Diode, 30A, 100V, 2+Tab-pin TO-263AB |
| Unit Price | 1,72 EUR |
| Minimum Order Quantity | 1 |
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| Description | Dimensions10.45 x 9.14 x 4.83mm Diode ConfigurationSingle Diode TypeRectifier Height4.83mm Length10.45mm Maximum Continuous Forward Current30A Maximum Operating Temperature+150 °C Minimum Operating Temperature-40 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeTO-263AB Peak Forward Voltage0.91V Peak Reverse Current45mA Peak Reverse Repetitive Voltage100V Pin Count2+Tab Rectifier TypeSchottky Barrier Width9.14mm Product Details TMBS® Trench MOS Barrier Schottky Rectifiers, Vishay Semiconductor The Trench MOS Barrier Schottky (TMBS®) Rectifier Series by Vishay contain a patented trench structure. TMBS® rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS® structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds. FeaturesPatented Trench StructureImproved efficiency in AC/DC Switched mode-power supplies and DC/DC convertersHigh power density and low forward voltage Diodes and Rectifiers, Vishay Semiconductor |
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