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| Producent | Vishay | | Part Number | VS-GB75YF120N (VSGB75YF120N) |
| Specifications | Vishay, VS-GB75YF120N, IGBT Module, N-channel, Quad, 100 A max, 1200 V, 49-pin Econo2 |
| Unit Price | 94,53 EUR |
| Minimum Order Quantity | 1 |
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| Description | Channel TypeN ConfigurationQuad Dimensions107.8 x 45.4 x 17mm Height17mm Length107.8mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current100 A Maximum Gate Emitter Voltage± 20V Maximum Operating Temperature+150 °C Maximum Power Dissipation480 W Package TypeECONO2 Pin Count49 Switching Speed8 → 60kHz Width45.4mm Product Details IGBT Modules, Vishay Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems. Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges. Wide range of industry-standard package styles Direct mount on heat sink Choice of PT, NPT, and Trench IGBT technologies Low-VCE(on) IGBT Switching frequency from 1 kHz to 150 kHzRugged transient performanceHigh isolation voltage up to 3500 V100 % lead (Pb)-free and RoHS-compliantLow thermal resistance Wide operating temperature range (-40 °C to +175 °C) IGBT Modules, Vishay The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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