BYG23T-M3/TR VISHAY GENERAL SEMICONDUCTOR DIODE, AVALANCHE, 1300V, 1A, SMA

ProducentVISHAY GENERAL SEMICONDUCTOR
Part Number

BYG23T-M3/TR (BYG23TM3TR)

Specifications

DIODE, AVALANCHE, 1300V, 1A, SMA

Unit Price14,44 EUR
Minimum Order Quantity1
Tariff No.85411000
Lead Time8 weeks
Weight and Dimension0.009 Kg
DescriptionDiode Case Style: DO-214AC Diode Configuration: Single Diode Type: Fast Recovery Forward Current If(AV): 1A Forward Surge Current Ifsm Max: 18A Forward Voltage VF Max: 1.9V No. of Pins: 2 Operating Temperature Max: 150°C Packaging: Each Repetitive Reverse Voltage Vrrm Max: 1.3kV Reverse Recovery Time trr Max: 75ns SVHC: To Be Advised
Datasheets
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