VS-20ETS12S-M3 Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 20A TO263AB Diode Standard 1200V (1.2kV) 20A Surface Mount TO-263 (D2Pak)

ProducentVishay Semiconductor Diodes Division
Part Number

VS-20ETS12S-M3 (VS20ETS12SM3)

Specifications

DIODE GEN PURP 1.2KV 20A TO263AB Diode Standard 1200V (1.2kV) 20A Surface Mount TO-263 (D2Pak)

Unit Price2,14 EUR
Minimum Order Quantity1
Tariff No.
Lead Time70 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Diodes - Rectifiers - Single Manufacturer Vishay Semiconductor Diodes Division Series - Packaging Cut Tape (CT) Part Status Active Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V (1.2kV) Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 1.1V @ 20A Speed Fast Recovery = 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 1200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263 (D2Pak) Operating Temperature - Junction -40°C ~ 150°C
Datasheets
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