VS-GB75LP120N Vishay Semiconductor Diodes Division IGBT 1200V 170A 658W INT-A-PAK IGBT Module Single 1200V 170A 658W Chassis Mount INT-A-PAK

ProducentVishay Semiconductor Diodes Division
Part Number

VS-GB75LP120N (VSGB75LP120N)

Specifications

IGBT 1200V 170A 658W INT-A-PAK IGBT Module Single 1200V 170A 658W Chassis Mount INT-A-PAK

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Minimum Order Quantity24
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DescriptionCategories Discrete Semiconductor Products Transistors - IGBTs - Modules Manufacturer Vishay Semiconductor Diodes Division Series - Part Status Obsolete IGBT Type - Configuration Single Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 170A Power - Max 658W Vce(on) (Max) @ Vge, Ic 1.82V @ 15V, 75A (Typ) Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 5.52nF @ 25V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-PAK (3 + 4) Supplier Device Package INT-A-PAK
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