VS-ENQ030L120S Vishay Semiconductor Diodes Division IGBT 1200V 61A 216W EMIPAK-1B IGBT Module Trench Three Level Inverter 1200V 61A 216W Chassis Mount EMIPAK-1B

ProducentVishay Semiconductor Diodes Division
Part Number

VS-ENQ030L120S (VSENQ030L120S)

Specifications

IGBT 1200V 61A 216W EMIPAK-1B IGBT Module Trench Three Level Inverter 1200V 61A 216W Chassis Mount EMIPAK-1B

Unit Price121,54 EUR
Minimum Order Quantity98
Tariff No.
Lead Time
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - IGBTs - Modules Manufacturer Vishay Semiconductor Diodes Division Series - Part Status Active IGBT Type Trench Configuration Three Level Inverter Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 61A Power - Max 216W Vce(on) (Max) @ Vge, Ic 2.52V @ 15V, 30A Current - Collector Cutoff (Max) 230µA Input Capacitance (Cies) @ Vce 3.34nF @ 30V Input Standard NTC Thermistor Yes Operating Temperature 150°C (TJ) Mounting Type Chassis Mount Package / Case EMIPAK-1B Supplier Device Package EMIPAK-1B
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