VS-ETF150Y65U Vishay Semiconductor Diodes Division IGBT 650V 150A EMIPAK-2B IGBT Module Trench Three Level Inverter 650V 142A 417W Chassis Mount EMIPAK-2B

ProducentVishay Semiconductor Diodes Division
Part Number

VS-ETF150Y65U (VSETF150Y65U)

Specifications

IGBT 650V 150A EMIPAK-2B IGBT Module Trench Three Level Inverter 650V 142A 417W Chassis Mount EMIPAK-2B

Unit Price83,07 EUR
Minimum Order Quantity56
Tariff No.
Lead Time105 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - IGBTs - Modules Manufacturer Vishay Semiconductor Diodes Division Series - Part Status Active IGBT Type Trench Configuration Three Level Inverter Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 142A Power - Max 417W Vce(on) (Max) @ Vge, Ic 2.06V @ 15V, 100A Current - Collector Cutoff (Max) 100µA Input Capacitance (Cies) @ Vce 6.6nF @ 30V Input Standard NTC Thermistor No Operating Temperature 175°C (TJ) Mounting Type Chassis Mount Package / Case EMIPAK-2B Supplier Device Package EMIPAK-2B
Datasheets
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