VS-GB75DA120UP Vishay Semiconductor Diodes Division MODULE IGBT SOT-227 IGBT Module NPT Single 1200V 658W Chassis Mount SOT-227

ProducentVishay Semiconductor Diodes Division
Part Number

VS-GB75DA120UP (VSGB75DA120UP)

Specifications

MODULE IGBT SOT-227 IGBT Module NPT Single 1200V 658W Chassis Mount SOT-227

Unit Price
Minimum Order Quantity180
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Lead Time
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - IGBTs - Modules Manufacturer Vishay Semiconductor Diodes Division Series - Part Status Obsolete IGBT Type NPT Configuration Single Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) - Power - Max 658W Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 75A Current - Collector Cutoff (Max) 250µA Input Capacitance (Cies) @ Vce - Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SOT-227-4, miniBLOC Supplier Device Package SOT-227
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