VS-GB90DA60U Vishay Semiconductor Diodes Division TRANSISTOR INSLTED GATE BIPOLAR IGBT Module NPT Single 600V 147A 625W Chassis Mount SOT-227

ProducentVishay Semiconductor Diodes Division
Part Number

VS-GB90DA60U (VSGB90DA60U)

Specifications

TRANSISTOR INSLTED GATE BIPOLAR IGBT Module NPT Single 600V 147A 625W Chassis Mount SOT-227

Unit Price71,93 EUR
Minimum Order Quantity160
Tariff No.
Lead Time112 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - IGBTs - Modules Manufacturer Vishay Semiconductor Diodes Division Series - Part Status Active IGBT Type NPT Configuration Single Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 147A Power - Max 625W Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 100A Current - Collector Cutoff (Max) 100µA Input Capacitance (Cies) @ Vce - Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SOT-227-4 Supplier Device Package SOT-227
Datasheets
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