SIS892ADN-T1-GE3 Vishay Semiconductors MOSFET 100V 33mOhm@10V 28A N-Ch MV T-FET
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| Producent | Vishay Semiconductors | | Part Number | SIS892ADN-T1-GE3 (SIS892ADNT1GE3) |
| Specifications | MOSFET 100V 33mOhm@10V 28A N-Ch MV T-FET |
| Unit Price | 0,97 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 20 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 28 A Vds - Drain-Source Breakdown Voltage: 100 V Rds On - Drain-Source Resistance: 33 mOhms Transistor Polarity: N-Channel Qg - Gate Charge: 6.1 nC Pd - Power Dissipation: 52 W Mounting Style: SMD/SMT Package/Case: PowerPAK-1212-8 Packaging: Reel Configuration: Single Series: SISxxxADN Factory Pack Quantity: 3000 Tradename: ThunderFET TrenchFET Part # Aliases: SIS892ADN-GE3 |
| Datasheets | |
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