SUD35N10-26P-E3 Vishay Semiconductors MOSFET 100V 35A 83W 26mohm @ 10V
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| Producent | Vishay Semiconductors | | Part Number | SUD35N10-26P-E3 (SUD35N1026PE3) |
| Specifications | MOSFET 100V 35A 83W 26mohm @ 10V |
| Unit Price | 1,97 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 19 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 12 A Vds - Drain-Source Breakdown Voltage: 100 V Rds On - Drain-Source Resistance: 26 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 4.4 V Qg - Gate Charge: 31 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 8.3 W Mounting Style: SMD/SMT Package/Case: DPAK-3 Packaging: Reel Channel Mode: Enhancement Ciss - Input Capacitance: 2 nF Configuration: Single Fall Time: 10 ns Minimum Operating Temperature: - 55 C Rise Time: 10 ns Factory Pack Quantity: 2000 Typical Turn-Off Delay Time: 15 ns |
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