SI7456DP-T1-GE3 Vishay Semiconductors MOSFET 100V 9.3A 5.2W 25mohm @ 10V
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| Producent | Vishay Semiconductors | | Part Number | SI7456DP-T1-GE3 (SI7456DPT1GE3) |
| Specifications | MOSFET 100V 9.3A 5.2W 25mohm @ 10V |
| Unit Price | 1,66 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 14 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 9.3 A Vds - Drain-Source Breakdown Voltage: 100 V Rds On - Drain-Source Resistance: 25 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 5.2 W Mounting Style: SMD/SMT Package/Case: SO-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 10 ns Minimum Operating Temperature: - 55 C Rise Time: 10 ns Series: SI74xxDx Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 46 ns Part # Aliases: SI7456DP-GE3 |
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