SI7456DDP-T1-GE3 Vishay Semiconductors MOSFET 100volt 23mOhms@10V 27.8A N-Ch T-FET

ProducentVishay Semiconductors
Part Number

SI7456DDP-T1-GE3 (SI7456DDPT1GE3)

Specifications

MOSFET 100volt 23mOhms@10V 27.8A N-Ch T-FET

Unit Price1,54 EUR
Minimum Order Quantity1
Tariff No.
Lead Time19 weeks
Weight and Dimension
DescriptionVishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 27.8 A Vds - Drain-Source Breakdown Voltage: 100 V Rds On - Drain-Source Resistance: 23 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 2.8 V Qg - Gate Charge: 9.7 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 35.7 W Mounting Style: SMD/SMT Package/Case: SO-8 Packaging: Reel Configuration: Single Fall Time: 10 ns Forward Transconductance - Min: 26 S Minimum Operating Temperature: - 55 C Rise Time: 14 ns Series: SI74xxDx Factory Pack Quantity: 3000 Tradename: ThunderFET TrenchFET Typical Turn-Off Delay Time: 19 ns
Datasheets
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