SIA413DJ-T1-GE3 Vishay Semiconductors MOSFET 12V 12A 19W 29mohm @ 4.5V
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| Producent | Vishay Semiconductors | | Part Number | SIA413DJ-T1-GE3 (SIA413DJT1GE3) |
| Specifications | MOSFET 12V 12A 19W 29mohm @ 4.5V |
| Unit Price | 1,00 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 16 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 10 A Vds - Drain-Source Breakdown Voltage: - 12 V Rds On - Drain-Source Resistance: 29 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 8 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.5 W Mounting Style: SMD/SMT Package/Case: PowerPAK-SC-70-6 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 40 ns Forward Transconductance - Min: 30 S Minimum Operating Temperature: - 55 C Rise Time: 40 ns Series: SIA4xxDJ Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 70 ns Part # Aliases: SIA413DJ-GE3 |
| Datasheets | |
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