SI3477DV-T1-GE3 Vishay Semiconductors MOSFET -12V 17.5mOhm@4.5V 8A P-Ch G-III
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| Producent | Vishay Semiconductors | | Part Number | SI3477DV-T1-GE3 (SI3477DVT1GE3) |
| Specifications | MOSFET -12V 17.5mOhm@4.5V 8A P-Ch G-III |
| Unit Price | 0,84 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 16 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: - 8 A Vds - Drain-Source Breakdown Voltage: - 12 V Rds On - Drain-Source Resistance: 17.5 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 10 V Vgs th - Gate-Source Threshold Voltage: - 1 V Qg - Gate Charge: 28.3 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.2 W Mounting Style: SMD/SMT Package/Case: TSOP-6 Packaging: Reel Brand: Vishay Semiconductors Configuration: Single Quad Drain Fall Time: 30 nS Forward Transconductance - Min: 30 S Minimum Operating Temperature: - 55 C Rise Time: 10 nS Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 65 nS Part # Aliases: SI3477DV-GE3 |
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