SI7102DN-T1-GE3 Vishay Semiconductors MOSFET 12V 35A 52W 3.8mohm @ 4.5V
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| Producent | Vishay Semiconductors | | Part Number | SI7102DN-T1-GE3 (SI7102DNT1GE3) |
| Specifications | MOSFET 12V 35A 52W 3.8mohm @ 4.5V |
| Unit Price | 1,73 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 19 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 25 A Vds - Drain-Source Breakdown Voltage: 12 V Rds On - Drain-Source Resistance: 3.8 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 8 V Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 73 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.8 W Mounting Style: SMD/SMT Package/Case: PowerPAK-1212-8 Packaging: Reel Channel Mode: Enhancement Ciss - Input Capacitance: 3.72 nF Configuration: Single Fall Time: 12 ns Minimum Operating Temperature: - 50 C Rise Time: 125 ns Series: SI71xxDx Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 53 ns Part # Aliases: SI7102DN-GE3 |
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