SiA517DJ-T1-GE3 Vishay Semiconductors MOSFET 12V 4.5A 6.5W 29/61mohm @ 4.5V
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| Producent | Vishay Semiconductors | | Part Number | SiA517DJ-T1-GE3 (SIA517DJT1GE3) |
| Specifications | MOSFET 12V 4.5A 6.5W 29/61mohm @ 4.5V |
| Unit Price | 0,77 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 16 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 4.5 A Vds - Drain-Source Breakdown Voltage: 12 V Rds On - Drain-Source Resistance: 24 mOhms, 50 mOhms Transistor Polarity: N-Channel, P-Channel Vgs - Gate-Source Breakdown Voltage: 8 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.5 W Mounting Style: SMD/SMT Package/Case: SC-70-6 Packaging: Reel Channel Mode: Enhancement Configuration: Dual Fall Time: 10 ns, 25 ns Minimum Operating Temperature: - 55 C Rise Time: 10 ns, 25 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 22 ns, 30 ns Part # Aliases: SIA517DJ-GE3 |
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