SIR492DP-T1-GE3 Vishay Semiconductors MOSFET 12V 40A 36W 3.8mohm @ 4.5V

ProducentVishay Semiconductors
Part Number

SIR492DP-T1-GE3 (SIR492DPT1GE3)

Specifications

MOSFET 12V 40A 36W 3.8mohm @ 4.5V

Unit Price1,67 EUR
Minimum Order Quantity1
Tariff No.
Lead Time19 weeks
Weight and Dimension
DescriptionVishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 27 A Vds - Drain-Source Breakdown Voltage: 12 V Rds On - Drain-Source Resistance: 3.8 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 8 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.2 W Mounting Style: SMD/SMT Package/Case: SO-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Quad Drain Triple Source Fall Time: 12 ns Minimum Operating Temperature: - 50 C Rise Time: 125 ns Series: SIRxxxDP Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 53 ns Part # Aliases: SIR492DP-GE3
Datasheets
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