SI4931DY-T1-E3 Vishay Semiconductors MOSFET 12V 8.9A 1.1W
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| Producent | Vishay Semiconductors | | Part Number | SI4931DY-T1-E3 (SI4931DYT1E3) |
| Specifications | MOSFET 12V 8.9A 1.1W |
| Unit Price | 1,21 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 40 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 6.7 A Vds - Drain-Source Breakdown Voltage: - 12 V Rds On - Drain-Source Resistance: 18 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 8 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.1 W Mounting Style: SMD/SMT Package/Case: SOIC-Narrow-8 Packaging: Reel Channel Mode: Enhancement Configuration: Dual Fall Time: 46 ns Minimum Operating Temperature: - 55 C Rise Time: 46 ns Factory Pack Quantity: 2500 Tradename: TrenchFET Typical Turn-Off Delay Time: 230 ns Part # Aliases: SI4931DY-E3 |
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