SI7818DN-T1-GE3 Vishay Semiconductors MOSFET 150V 3.4A 3.8W 135mohm @ 10V
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| Producent | Vishay Semiconductors | | Part Number | SI7818DN-T1-GE3 (SI7818DNT1GE3) |
| Specifications | MOSFET 150V 3.4A 3.8W 135mohm @ 10V |
| Unit Price | 1,64 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 19 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 2.2 A Vds - Drain-Source Breakdown Voltage: 150 V Rds On - Drain-Source Resistance: 135 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.5 W Mounting Style: SMD/SMT Package/Case: PowerPAK-1212-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 10 ns Minimum Operating Temperature: - 55 C Rise Time: 10 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 25 ns Part # Aliases: SI7818DN-GE3 |
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