SI7115DN-T1-E3 Vishay Semiconductors MOSFET 150V 8.9A 52W

ProducentVishay Semiconductors
Part Number

SI7115DN-T1-E3 (SI7115DNT1E3)

Specifications

MOSFET 150V 8.9A 52W

Unit Price1,92 EUR
Minimum Order Quantity1
Tariff No.
Lead Time19 weeks
Weight and Dimension
DescriptionVishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 2.3 A Vds - Drain-Source Breakdown Voltage: - 150 V Rds On - Drain-Source Resistance: 295 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.7 W Mounting Style: SMD/SMT Package/Case: PowerPAK-1212-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 34 ns, 35 ns Minimum Operating Temperature: - 50 C Rise Time: 95 ns, 28 ns Series: SI71xxDx Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 38 ns, 52 ns Part # Aliases: SI7115DN-E3
Datasheets
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