SI4464DY-T1-E3 Vishay Semiconductors MOSFET 200V 2.2A 0.24Ohm

ProducentVishay Semiconductors
Part Number

SI4464DY-T1-E3 (SI4464DYT1E3)

Specifications

MOSFET 200V 2.2A 0.24Ohm

Unit Price1,13 EUR
Minimum Order Quantity1
Tariff No.
Lead Time15 weeks
Weight and Dimension
DescriptionVishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 1.7 A Vds - Drain-Source Breakdown Voltage: 200 V Rds On - Drain-Source Resistance: 240 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.5 W Mounting Style: SMD/SMT Package/Case: SOIC-Narrow-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 12 ns Minimum Operating Temperature: - 55 C Rise Time: 12 ns Factory Pack Quantity: 2500 Tradename: TrenchFET Typical Turn-Off Delay Time: 15 ns Part # Aliases: SI4464DY-E3
Datasheets
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