SI8851EDB-T2-E1 Vishay Semiconductors MOSFET -20V .0080ohm@-4.5V -16.7A P-Ch
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| Producent | Vishay Semiconductors | | Part Number | SI8851EDB-T2-E1 (SI8851EDBT2E1) |
| Specifications | MOSFET -20V .0080ohm@-4.5V -16.7A P-Ch |
| Unit Price | 0,68 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 17 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 16.7 A Vds - Drain-Source Breakdown Voltage: 20 V Rds On - Drain-Source Resistance: 8 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 8 V Qg - Gate Charge: 70 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.1 W Mounting Style: SMD/SMT Package/Case: MicroFoot-30 Packaging: Reel Fall Time: 35 ns Minimum Operating Temperature: - 55 C Rise Time: 40 ns Series: SI8851EDB Tradename: TrenchFET Typical Turn-Off Delay Time: 115 ns |
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