SIR484DP-T1-GE3 Vishay Semiconductors MOSFET 20V 20A 29.8W
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| Producent | Vishay Semiconductors | | Part Number | SIR484DP-T1-GE3 (SIR484DPT1GE3) |
| Specifications | MOSFET 20V 20A 29.8W |
| Unit Price | 0,97 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 19 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 20 A Vds - Drain-Source Breakdown Voltage: 20 V Rds On - Drain-Source Resistance: 9.5 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.9 W Mounting Style: SMD/SMT Package/Case: SO-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 10 ns Forward Transconductance - Min: 29 S Minimum Operating Temperature: - 55 C Rise Time: 12 ns Series: SIRxxxDP Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 17 ns Part # Aliases: SIR484DP-GE3 |
| Datasheets | |
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