SI8425DB-T1-E1 Vishay Semiconductors MOSFET -20V 23mOhm@4.5V 9.3A P-Ch G-III
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| Producent | Vishay Semiconductors | | Part Number | SI8425DB-T1-E1 (SI8425DBT1E1) |
| Specifications | MOSFET -20V 23mOhm@4.5V 9.3A P-Ch G-III |
| Unit Price | 0,55 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 17 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: - 9.3 A Vds - Drain-Source Breakdown Voltage: - 20 V Rds On - Drain-Source Resistance: 23 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 10 V Vgs th - Gate-Source Threshold Voltage: - 900 mV Qg - Gate Charge: 110 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2.7 W Mounting Style: SMD/SMT Package/Case: MicroFoot-4 Packaging: Reel Ciss - Input Capacitance: 2.8 nF Configuration: Single Fall Time: 200 ns Forward Transconductance - Min: 18 S Minimum Operating Temperature: - 55 C Rise Time: 50 ns Factory Pack Quantity: 3000 Tradename: MICROFOOT TrenchFET Typical Turn-Off Delay Time: 600 ns |
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