SI8812DB-T2-E1 Vishay Semiconductors MOSFET 20V 3.2A 0.9W 0.059ohms @ 4.5V
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| Producent | Vishay Semiconductors | | Part Number | SI8812DB-T2-E1 (SI8812DBT2E1) |
| Specifications | MOSFET 20V 3.2A 0.9W 0.059ohms @ 4.5V |
| Unit Price | 0,56 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 18 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 3.2 A Vds - Drain-Source Breakdown Voltage: 20 V Rds On - Drain-Source Resistance: 590 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 8 V Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 6.3 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 900 mW Mounting Style: SMD/SMT Package/Case: MicroFoot-4 Packaging: Reel Configuration: Single Forward Transconductance - Min: 12 S Minimum Operating Temperature: - 55 C Series: TrenchFET Factory Pack Quantity: 3000 Tradename: Micro Foot |
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