SI2365EDS-T1-GE3 Vishay Semiconductors MOSFET -20V 32mOhm@4.5V 5.9A P-Ch G-III
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| Producent | Vishay Semiconductors | | Part Number | SI2365EDS-T1-GE3 (SI2365EDST1GE3) |
| Specifications | MOSFET -20V 32mOhm@4.5V 5.9A P-Ch G-III |
| Unit Price | 0,52 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 15 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: - 5.9 A Vds - Drain-Source Breakdown Voltage: - 20 V Rds On - Drain-Source Resistance: 32 mOhms Transistor Polarity: P-Channel Vgs th - Gate-Source Threshold Voltage: - 1 V Qg - Gate Charge: 13.8 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.7 W Mounting Style: SMD/SMT Package/Case: SOT-23-3 Packaging: Reel Configuration: Single Fall Time: 21 us Minimum Operating Temperature: - 55 C Rise Time: 32 us Factory Pack Quantity: 3000 Tradename: TrenchFET Typical Turn-Off Delay Time: 62 us Part # Aliases: SI4816DY-T1-E3-S |
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