SI2323DDS-T1-GE3 Vishay Semiconductors MOSFET -20V 39mOhm@4.5V -5.3A P-Ch G-III
| |
|
| Producent | Vishay Semiconductors | | Part Number | SI2323DDS-T1-GE3 (SI2323DDST1GE3) |
| Specifications | MOSFET -20V 39mOhm@4.5V -5.3A P-Ch G-III |
| Unit Price | 0,60 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 21 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: - 5.3 A Vds - Drain-Source Breakdown Voltage: - 20 V Rds On - Drain-Source Resistance: 39 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 8 V Vgs th - Gate-Source Threshold Voltage: - 1 V Qg - Gate Charge: 13.6 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.7 W Mounting Style: SMD/SMT Package/Case: SOT-23-3 Packaging: Reel Channel Mode: Enhancement Ciss - Input Capacitance: 1.16 nF Configuration: Single Fall Time: 11 ns Forward Transconductance - Min: 18 S Minimum Operating Temperature: - 55 C Rise Time: 22 ns Series: SI2323DDS Factory Pack Quantity: 3000 Tradename: TrenchFET Power MOSFET Typical Turn-Off Delay Time: 52 ns |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
