SI2314EDS-T1-E3 Vishay Semiconductors MOSFET 20V 4.9A
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| Producent | Vishay Semiconductors | | Part Number | SI2314EDS-T1-E3 (SI2314EDST1E3) |
| Specifications | MOSFET 20V 4.9A |
| Unit Price | 0,68 EUR |
| Minimum Order Quantity | 1 |
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| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 4.9 A Vds - Drain-Source Breakdown Voltage: 20 V Rds On - Drain-Source Resistance: 33 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 12 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 750 mW Mounting Style: SMD/SMT Package/Case: SOT-23-3 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 1400 ns Minimum Operating Temperature: - 55 C Rise Time: 1400 ns Factory Pack Quantity: 3000 Tradename: TrenchFET Typical Turn-Off Delay Time: 13500 ns Part # Aliases: SI2314EDS-E3 |
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