SIA914ADJ-T1-GE3 Vishay Semiconductors MOSFET 20V 43mOhom@4.5V 4.5A Dual N-CH
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| Producent | Vishay Semiconductors | | Part Number | SIA914ADJ-T1-GE3 (SIA914ADJT1GE3) |
| Specifications | MOSFET 20V 43mOhom@4.5V 4.5A Dual N-CH |
| Unit Price | 0,59 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 13 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 4.5 A Vds - Drain-Source Breakdown Voltage: 20 V Rds On - Drain-Source Resistance: 47 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 8 V Vgs th - Gate-Source Threshold Voltage: 0.9 V Qg - Gate Charge: 8.2 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 7.8 W Mounting Style: SMD/SMT Package/Case: SC-70-6 Packaging: Reel Channel Mode: Enhancement Configuration: Dual Fall Time: 5 ns Forward Transconductance - Min: 18 S Minimum Operating Temperature: - 55 C Rise Time: 20 ns Factory Pack Quantity: 3000 Tradename: TrenchFET Typical Turn-Off Delay Time: 25 ns |
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