SI2312BDS-T1-GE3 Vishay Semiconductors MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
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| Producent | Vishay Semiconductors | | Part Number | SI2312BDS-T1-GE3 (SI2312BDST1GE3) |
| Specifications | MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V |
| Unit Price | 0,51 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 18 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 3.9 A Vds - Drain-Source Breakdown Voltage: 20 V Rds On - Drain-Source Resistance: 31 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 8 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 750 mW Mounting Style: SMD/SMT Package/Case: SOT-23-3 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 30 ns Minimum Operating Temperature: - 55 C Rise Time: 30 ns Factory Pack Quantity: 3000 Tradename: TrenchFET Typical Turn-Off Delay Time: 35 ns Part # Aliases: SI2312BDS-GE3 |
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