SI3460DDV-T1-GE3 Vishay Semiconductors MOSFET 20V 7.9A N-CH MOSFET
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| Producent | Vishay Semiconductors | | Part Number | SI3460DDV-T1-GE3 (SI3460DDVT1GE3) |
| Specifications | MOSFET 20V 7.9A N-CH MOSFET |
| Unit Price | 0,38 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 13 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 7.9 A Vds - Drain-Source Breakdown Voltage: 20 V Rds On - Drain-Source Resistance: 23 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 8 V Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2.7 W Mounting Style: SMD/SMT Package/Case: TSOP-6 Packaging: Reel Brand: Vishay Semiconductors Ciss - Input Capacitance: 666 pF Configuration: Single Fall Time: 8 ns Forward Transconductance - Min: 35 S Minimum Operating Temperature: - 55 C Rise Time: 11 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 21 ns Part # Aliases: SI3460DDV-GE3 |
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