SI5459DU-T1-GE3 Vishay Semiconductors MOSFET 20V 8.0A 10.9W 52mohm @ 4.5V
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| Producent | Vishay Semiconductors | | Part Number | SI5459DU-T1-GE3 (SI5459DUT1GE3) |
| Specifications | MOSFET 20V 8.0A 10.9W 52mohm @ 4.5V |
| Unit Price | 0,68 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 16 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 8 A Vds - Drain-Source Breakdown Voltage: - 20 V Rds On - Drain-Source Resistance: 52 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 12 V Vgs th - Gate-Source Threshold Voltage: - 1.4 V Qg - Gate Charge: 17 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 10.9 W Mounting Style: SMD/SMT Package/Case: PowerPAK-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 9 ns Minimum Operating Temperature: - 55 C Rise Time: 15 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 26 ns Part # Aliases: SI5459DU-GE3 |
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