SIR850DP-T1-GE3 Vishay Semiconductors MOSFET 25V 30A 41.7W 7.0mohm @ 10V
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| Producent | Vishay Semiconductors | | Part Number | SIR850DP-T1-GE3 (SIR850DPT1GE3) |
| Specifications | MOSFET 25V 30A 41.7W 7.0mohm @ 10V |
| Unit Price | 1,03 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 16 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: 25 V Rds On - Drain-Source Resistance: 7.3 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 41.7 W Mounting Style: SMD/SMT Package/Case: SO-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 11 ns Forward Transconductance - Min: 85 S Minimum Operating Temperature: - 55 C Rise Time: 20 ns Series: SIRxxxDP Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 30 ns Part # Aliases: SIR850DP-GE3 |
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