SI4925BDY-T1-E3 Vishay Semiconductors MOSFET 30 Volt 7.1 Amp 2.0W
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| Producent | Vishay Semiconductors | | Part Number | SI4925BDY-T1-E3 (SI4925BDYT1E3) |
| Specifications | MOSFET 30 Volt 7.1 Amp 2.0W |
| Unit Price | 1,17 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 19 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 5.3 A Vds - Drain-Source Breakdown Voltage: - 30 V Rds On - Drain-Source Resistance: 25 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.1 W Mounting Style: SMD/SMT Package/Case: SOIC-Narrow-8 Packaging: Reel Channel Mode: Enhancement Configuration: Dual Fall Time: 34 ns Minimum Operating Temperature: - 55 C Rise Time: 12 ns Factory Pack Quantity: 2500 Tradename: TrenchFET Typical Turn-Off Delay Time: 60 ns Part # Aliases: SI4925BDY-E3 |
| Datasheets | |
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